Investigation of Short Channel Effects in SOI MOSFET with 20 nm Channel Length by a β-Ga2O3 Layer
نویسندگان
چکیده
منابع مشابه
Analytical Modeling and Simulation of Short-channel Effects in a Fully Depleted Dual-material Gate (dmg) Soi Mosfet
Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their potentially superior scalability rela...
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In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material ...
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Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we hav...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2020
ISSN: 2162-8777
DOI: 10.1149/2162-8777/ab878b