Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Atomic-layer soft plasma etching of MoS2

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...

Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

Investigation of the properties of SiGe islands by selective wet chemical etching and scanning probe microscopy

•-450 • C) die gleiche ist, wie die der freistehenden Inseln. Für die Inseln, die bei 580 • C ¨ uberwachsen worden sind, zeigt es sich, dass trotz morphologischen¨Anderungen der Ge-reiche Teil noch existiert. Dieses weisst darauf hin, dass zumindestens bis zur Temperatur von 580 • C keine Massendiffusion stattfindet.

Electrical double layer catalyzed wet-etching of silicon dioxide.

We show that carbon nanotubes (CNTs) accelerate the wet etching of silicon dioxide in a strong alkaline solution. This catalytic effect is due to the spontaneous adsorption of hydroxide on the surface of the CNTs. Such adsorption creates an electrical double layer around the CNTs within which the concentration of hydroxide is higher than the bulk value. Our result suggests that the electrical d...

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...