Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma
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چکیده
منابع مشابه
Characterization of Nitrogen-rich Silicon Nitride Films Grown by the Electron Cyclotron Resonance Plasma Technique
Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...
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The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor deposition was used to produce these films under different values of gas flow ratio, deposition temperature, and microwave power. The amount of bonded hydrog...
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This paper reports on the preparation and characterization of thin films of silicon nitride deposited on heated silicon substrates from Si(CH, ),-NHS-H, mixtures activated at room temperature by an a-c. discharge at low frequency. The films were deposited at 800°C. Deposition rate as well as refractive index were measured and several parameters were systematically varied , including deposition ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2001
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.1371323