Ionization-induced thermally activated defect-annealing process in SiC

Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

Thermally activated magnetic reversal induced by a spin-polarized current.

We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of thermally activated escape over an effective barrier. However, the spin-transfer effect produces qualitatively different behaviors than an applied magnetic fie...

Annealing-induced reduction in nanoscale heterogeneity of thermally evaporated amorphous As2S3 films

evaporated amorphous As2S3 films A. C. Y. Liu, Xidong Chen, D.-Y. Choi, and B. Luther-Davies Department of Materials Engineering, Monash University, Clayton, Victoria, 3800, Australia Materials Science Division, Argonne National Laboratory, Illinois 60439-4845, USA and Cedarville University, Cedarville, Ohio 45314, USA Centre for Ultrahigh Bandwidth Devices for Optical Systems, Laser Physics Ce...

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence