L10-ordered FeNi film grown on Cu-Ni binary buffer layer

Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

ZnO film of 8 mm thickness was grown on a sapphire (0 01) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 02) and (10 2) o-scan rocking curves are 119 and 202 arcse...

Atomic-layer resolved magnetic and electronic structure analysis of ni thin film on a Cu(001) surface by diffraction spectroscopy.

Up until now there has been no direct method for detecting the electronic and magnetic structure of each atomic layer at the surface, which is an essential analysis technique for nanotechnology. For this purpose, we have developed a new method, diffraction spectroscopy, based on the photon energy dependence of the angular distribution of Auger electron emission. We have applied this method to a...

Modulation of preferred orientation and easy axis of magnetic anisotropy in L10 FePt films with Cu buffer layers

The crystallographic orientation and easy axis of magnetic anisotropy in L10 FePt films were successfully modulated with Cu buffer layers. The FePt film directly grown on the Cr90Mo10 underlayer showed a (001) preferred orientation with out-of-plane magnetic anisotropy. As the Cu buffer layer thickness was z4 nm, the FePt films showed a (110) preferred orientation with in-plane magnetic anisotr...

Ground-state properties of ordered, partially ordered, and random Cu-Au and Ni-Pt alloys.

Highly oriented nonepitaxially grown L10 FePt films