Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
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چکیده
منابع مشابه
The formation of a continuous amorphous layer by room . . temperature implantation of boron into silicon
Ion implantation of 60 ke V boron into {100} silicon at medium beam currents (150 ttA) was performed at 300-315 K over the dose range from 1 to 8 X 1016/cm2 • Diffraction contrast and high-resolution phase contrast transmission electron microscopy (TEM) were used on planview and 90· cross-section samples to study the formation of a continuous amorphous layer as a function of increasing dose. Ou...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4793507