Lithography Technology
نویسندگان
چکیده
منابع مشابه
Technology backgrounder: Immersion Lithography
The growth of the semiconductor industry is driven by Moore’s law: “The complexity for minimum component cost has increased at a rate of roughly a factor of two per year” [1]. Notice that Moore observed that not only was the number of components doubling yearly, but was doing so at minimum cost. One of the main factors driving the improvements in complexity and cost of ICs, is improvements in p...
متن کاملSingle spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.
Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where aberration correction is built into the mask itself, through Inverse Lithography Technology (ILT). By having fewer mirrors, this would re...
متن کاملStep and Flash Imprint Lithography: A Technology Review
SIAロードマップ上で予測されている微細な寸法目 標を、大変高価である従来から研究されてきた次世代 リソグラフィ(極UV、電子線投影、X線等)に頼らず に達成するため、インプリントリソグラフィ技術は研 究されている。この技術は半導体LSI以外にもマイク ロ電気機械システム(MEMS)、マイクロ光学、およ びパターン化記憶媒体などへの応用が有望視されてい る。流体排出の基本原理を利用するインプリントリソ グラフィは、像の縮小投影やそれに伴う回折ゆがみの 修正等を一切必要としない利点がある。しかしインプ リントリソグラフィ技術の中でも、より伝統的なマイ クロ鋳造法(m i c r omo l d i n g )や熱型押し法(he a t embossing)などでは、目合わせ精度やスループットに ついて克服しがたい障害が存在する。しかし現在主に テキサス大学オースティン校で開発されつつあ...
متن کاملPREVAIL-Electron projection technology approach for next-generation lithography
This paper is an overview of work in the IBM Microelectronics Division to extend electronbeam lithography technology to the projection level for use in next-generation lithography. The approach being explored—Projection Reduction Exposure with Variable Axis Immersion Lenses (PREVAIL)—combines the high exposure efficiency of massively parallel pixel projection with scanning-probe-forming systems...
متن کاملLayout Design and Lithography Technology for Advanced Devices
OVERVIEW: The minimum feature size required for the most advanced semiconductor devices is now below half the exposure wavelength, and the optical lithography technology is facing its practical resolution limit. In this article, we review the current status of DFM and issues for further miniaturization. The role and requirements of metrology technology are also discussed. The layout design has ...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1991
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1990.111.7_600