Low Frequency Noise in n-GaN with High Electron Mobility

N-face high electron mobility transistors with a GaN-spacer

N-face AlGaN (cap)/GaN (channel)/AlGaN (barrier)/GaN (buffer) high electron mobility transistors (HEMTs) provide a simple solution for strong confinement of the two-dimensional electron gas (2DEG) from the back since carriers are induced on top of the AlGaN barrier. To reduce the adverse effects of random alloy scattering from the AlGaN barrier, an N-face GaN-spacer HEMT was designed with an ep...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Passivated AlGaN / GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...

High Mobility in N-Type GaN Substrates

Excess low-frequency noise in AlGaNÕGaN-based high-electron-mobility transistors

The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by metalorganic chemical vapor deposition have been studied. Certain features of the 1/f noise have been revealed in these short-gate transistors. The low-frequency noise spectra show drastically different behavior depending on the gate voltage VG ...