Low Temperature Copper-Copper Quasi-Di rect Bonding Utilizing Ultra-Thin Metal Interlayer Formation by Atomic Layer Deposition
نویسندگان
چکیده
منابع مشابه
Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor
We report a method for producing thin, completely continuous and highly conductive copper films conformally inside very narrow holes with aspect ratios over 35:1 by atomic layer deposition ALD . Pure copper thin films were grown from a novel copper I amidinate precursor, copper I N,N -di-sec-butylacetamidinate, and molecular hydrogen gas as the reducing agent. This copper precursor is a liquid ...
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Thin and continuous copper films serve as seed layers for electrodeposition of interconnects in microelectronic devices. Gaps in the continuity of these Cu films must be avoided, because they can generate voids that later lead to failure of the devices. It is difficult to sputter completely continuous copper-seed layers into the increasingly narrow trenches and holes in modern interconnects. He...
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متن کاملSynthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal.
A series of copper(I) amidinates of the general type [(R'NC(R)NR'')Cu](2) (R' and R'' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) ...
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Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10(-3) torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the ori...
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ژورنال
عنوان ژورنال: Journal of Smart Processing
سال: 2020
ISSN: 2186-702X,2187-1337
DOI: 10.7791/jspmee.9.232