Low Temperature Deposition of SiNx Thin Films by the LPCVD Method
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چکیده
منابع مشابه
Low temperature deposition of SiNx thin films by the LPCVD method
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the ...
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ژورنال
عنوان ژورنال: Croatica Chemica Acta
سال: 2012
ISSN: 0011-1643,1334-417X
DOI: 10.5562/cca1970