Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors

We performed the 1/f noise measurements on n-channel indium antimonide ~InSb! metal–oxide– semiconductor field-effect transistors ~MOSFETs! biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of ene...

High-performance nanowire field-effect transistors

Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...

Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors

Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires.

A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin...

High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the appl...