Low‐temperature atmospheric pressure plasma conversion of polydimethylsiloxane and polysilazane precursor layers to oxide thin films

We study the conversion of two polymeric silicon precursor compound layers (perhydropolysilazane and polydimethylsiloxane) on a wafer polyethylene terephthalate substrates to oxide thin films using pulsed atmospheric pressure plasma jet. Varying scan velocity number treatments results in various film compositions, as determined by X-ray photoelectron spectroscopy Fourier transform infrared spectroscopy. The mechanism suggested for process includes decomposition triggered plasma-produced species, oxidation surface, finally, diffusion oxygen into film, while gases produced during diffuse out film. latter is possibly facilitated local heating surface. appears depend sensitively balance between different contributions mechanism.