Magnetic Full Adder Based on NDR-enhanced Anomalous Hall Effect

Spintronic logic devices have attracted attention because of the prospect breaking von Neumann bottleneck through nonvolatile in-memory computing. Although varieties spin Boolean gates been proposed, spintronic arithmetic units such as adders not extensively studied difficulties in application cascade method CMOS-based devices. We experimentally demonstrated a full adder based on anomalous Hall effect and geometrical tuning magnetization switching driven by spin-orbit torque. The magnetic bits was enhanced nonlinear elements with N-type negative differential resistance to control on/off state xmlns:xlink="http://www.w3.org/1999/xlink">mosfet s, which determined write voltage memory unit. magnetizations unit were switched one increased geometry difference. order caused response input configurations conform function adder. computation combined writing realized only seven two steps. reduced number time steps indicated efficiency space our device, is beneficial for practical applications.