Magnetization dependent rectification in (Ga,Mn)As tri-layer tunnel junctions

Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% were obtained in junctions with a very thin (5 1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing the b...

Spin-dependent tunneling in magnetic tunnel junctions

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunneling magnetoresistance (TMR)...

Spin-dependent transport in molecular tunnel junctions.

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining s...

Tunnel-barrier-enhanced dc voltage signals induced by magnetization dynamics in magnetic tunnel junctions

We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complementary processes are predicted to result in a sizable voltage generation in ferromagnet F insulator I normal metal N and F I F junctions with one ferromagnet be...

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer