Magnetoelectric property in 3d transition metal oxide with tetrahedral structure
نویسندگان
چکیده
منابع مشابه
Electrical behaviour of metal / tetrahedral amorphous carbon / metal structure
Silicon and GaAs based devices are limited in their high-temperature applications as these materials lack high sensitivity to the temperature range above 200°C due to their small band gaps. Therefore, exploration of new materials with a high-temperature performance is necessary. Diamond-like carbon as a semiconducting material may be one of the promising candidates due to its many properties cl...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2012
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/400/3/032031