Mechanisms for enhancement of sensing performance in CMOS ISFET arrays using reactive ion etching

Reactive ion etching of GaN using WI3

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

POSFET tactile sensing arrays using CMOS technology

This work presents new tactile sensing chips consisting of 4 × 4 array of POSFET touch sensing devices (or taxels) and 4 diodes to measure contact temperature. In the new version presented here, the tactile sensing chips have been fabricated using CMOS technology. Both, the individual taxels and the array are designed to match spatio-temporal performance of the human fingertips. To detect conta...

Deep Reactive Ion Etching (DRIE)

Formation of Nanowrinkles on Varied Polymers Using Reactive Ion Etching

The optical and mechanical properties of many materials can be altered by forming nanoscale structures on their surfaces, such as wrinkles, without altering the bulk properties of the materials. Such nanowrinkled materials have important applications in many fields, including the production of photodetectors and solar cells. Wrinkles are formed when compressive strain is applied to a stiff skin...