Metal Halide Perovskite Light-Emitting Transistor with Tunable Emission Based on Electrically Doped Semiconductor Nanocrystal-Based Microcavities

Electroluminescence of metal halide perovskites has been widely reported via the fabrication and optimization light-emitting diodes transistors. Light-emitting transistors are particularly interesting owing to additional control gate voltage on electroluminescence. In this work, design a microcavity, with defect mode that can be tuned an applied voltage, integrated transistor is shown. The optical properties device have simulated transfer matrix method, considering wavelength-dependent refractive indexes all employed materials. tunability microcavity obtained employment doped semiconductor nanocrystalline films, which show tunable plasma frequency and, thus, index as function voltage. Consequently, electroluminescence perovskite demonstrated.