Microscopic Investigation of Interfaces with Ballistic Electron Emission Microscope.
نویسندگان
چکیده
منابع مشابه
Mapping of AlxGa12xAs band edges by ballistic electron emission spectroscopy
We have employed ballistic electron emission microscopy ~BEEM! to study the energy positions in the conduction band of AlxGa12xAs. Epilayers of undoped AlxGa12xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The Al...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 1995
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.34.848