Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors
نویسندگان
چکیده
منابع مشابه
fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Low Frequency Noise in Junction Field Effect Transistors
-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and drain current as additional variables. Sharp peaks of noise have been observed at some values of gate bias. The mechanism of low frequency noise caused by Schockley-Read-Hall (SRH) centres and the significance of charge capture processes in and near the channel are di...
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Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...
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The detailed study of random telegraph signal (RTS) currents and low-frequency (LF) noise in semiconductor devices in recent years has confirmed their cause and effect relationship. In this paper we describe the physical mechanisms responsible for RTS currents in any device. The methods for calculating the amplitudes and characteristic times of the RTS currents produced by traps with known elec...
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The gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regimes of operation. Analysis of experimental data for different transistors indicates that the noise spectrum is dominated by the channel noise rather than noise originated in series resistors. The obtained results shed new light on...
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ژورنال
عنوان ژورنال: Modeling and Numerical Simulation of Material Science
سال: 2014
ISSN: 2164-5345,2164-5353
DOI: 10.4236/mnsms.2014.43013