Modeling and Design of a Nano Scale CMOS Inverter for Symmetric Switching Characteristics
نویسندگان
چکیده
منابع مشابه
Low-Power Adder Design for Nano-Scale CMOS
A fast low-power 1-bit full adder circuit suitable for nano-scale CMOS implementation is presented. Out of the three modules in a common full-adder circuit, we have replaced one with a new design, and optimized another one, all with the goal to reduce the static power consumption. The design has been simulated and evaluated using the 65 nm PTM models.
متن کاملDesign for Manufacturability and Yield for Nano-Scale CMOS
Preparing the books to read every day is enjoyable for many people. However, there are still many people who also don't like reading. This is a problem. But, when you can support others to start reading, it will be better. One of the books that can be recommended for new readers is design for manufacturability and yield for nano scale cmos. This book is not kind of difficult book to read. It ca...
متن کاملLow-Power Adder Design for Nano-Scale CMOS
A fast low-power 1-bit full adder circuit suitable for nano-scale CMOS implementation is presented. Out of the three modules in a common full-adder circuit, we have replaced one with a new design, and optimized another one, all with the goal to reduce the static power consumption. The design has been simulated and evaluated using the 65 nm PTM models.
متن کاملinvestigating the feasibility of a proposed model for geometric design of deployable arch structures
deployable scissor type structures are composed of the so-called scissor-like elements (sles), which are connected to each other at an intermediate point through a pivotal connection and allow them to be folded into a compact bundle for storage or transport. several sles are connected to each other in order to form units with regular polygonal plan views. the sides and radii of the polygons are...
CMOS gate modeling based on equivalent inverter
A method for modeling complex CMOS gates by the reduction of each gate to an effective equivalent inverter is introduced. The conducting and parasitic behavior of parallel and serially connected transistors is accurately analyzed and an equivalent transistor is extracted for each case, taking into account the actual operating conditions of each device in the structure. The accuracy of the metho...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: VLSI Design
سال: 2012
ISSN: 1065-514X,1563-5171
DOI: 10.1155/2012/505983