Modelling line edge roughness in periodic line-space structures by Fourier optics to improve scatterometry
نویسندگان
چکیده
منابع مشابه
Impact of Mask Roughness on Wafer Line-Edge Roughness
The influence of line-edge roughness (LER) of an optical photomask on the resulting printed wafer LER is investigated. The LER Transfer function (LTF) proposed by Naulleau and Gallatin, and later corrected by Tanabe, is shown to be a very useful tool for evaluating the low-pass filtering behavior of the imaging tool and its impact on the transfer of mask LER to the wafer. Highfrequency mask LER...
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We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). The unperturbed, reference grating profile was determined from multiple azimuthal configurations using a generalized ellipsometer, focusing the incident beam into a 60 μm spot. We used rigorous numerical modeling, ta...
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As critical dimensions shrink, line edge and width roughness (LER and LWR) become of increasing concern. Traditionally LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requirements become proportionally more stringent, system-level effects begin to play an important role. Recent advanced EUV resist testing results have demonstrated lower bounds on achieva...
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Parameter uctuations found in ultrasmall devices are generally associated with discrete random dopants in semiconductors [1,2]. However, dopants are not the only source of intrinsic uctuations in device characteristics that can impede the traditional scaling approach in sub-100 nm MOSFETs. Other stochastic effects, such as oxide thickness uctuations, can also contribute to variations [3]. Line ...
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ژورنال
عنوان ژورنال: Journal of the European Optical Society: Rapid Publications
سال: 2014
ISSN: 1990-2573
DOI: 10.2971/jeos.2014.14003