Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures
نویسندگان
چکیده
منابع مشابه
Growth of InN on Ge substrate by molecular beam epitaxy
InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InNJ(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the inter...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2018
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5020026