Molecular Beam Epitaxy with Ionized Dopant
نویسندگان
چکیده
منابع مشابه
Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing pro...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1975
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1972.95.513