Moore–Gibson–Thompson Stability Model in a Two-Temperature Photonic Semiconductor Excited Medium Affected by Rotation and Initial Stress

In this paper, the two-temperature theory is used to examine a novel model that generalizes Moore–Gibson–Thompson (MGT) effect according two-dimensional electronic/thermoelastic deformation. The main equations for semiconductor medium in context of impact rotation are explained terms initial hydrostatic stress at free surface. normal-mode approach derive precise formulae fundamental physical quantities (i.e., normal displacement, load stress, electronic diffusion (carrier density), dynamic and conductive temperature distribution) under influence coefficient. comparison with base state performed using linear stability analysis. To make some comparisons based on various values thermal memories, number parameters applied each our primary quantities, such as parameter stress. An example fields’ perturbation also obtained graphically described.