Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors
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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors
The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2016
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.6b10332