Nonequilibrium transport in superconductor/ferromagnet/superconductor diffusive junctions: Interplay between proximity effect and ferromagnetism
                    
                        
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                    چکیده
منابع مشابه
Resonant proximity effect in normal metal/diffusive ferromagnet/superconductor junctions
Resonant proximity effect in the normal metal/insulator/diffusive ferromagnet/insulator/swave and d-wave superconductor N/I/DF/I/S junctions is studied for various regimes by solving the Usadel equation with the generalized boundary conditions. Conductance of the junction and the density of states in the DF layer are calculated as a function of the insulating barrier heights at the interfaces, ...
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J. C. Cuevas,1,2 J. Hammer,1 J. Kopu,3 J. K. Viljas,1 and M. Eschrig1 1Institut für Theoretische Festkörperphysik, Universität Karlsruhe, 76128 Karlsruhe, Germany 2Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain 3Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 2200, FIN-02015 HUT, Finland Received 24 January 20...
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The interaction between superconductivity and ferromagnetism, which entails incompatible spin order, is one of the problems of fundamental interest in condensed-matter physics. In general, when a ferromagnet is placed in contact with a superconductor, the Cooper pairs from the superconductor are not expected to survive beyond at most a few nanometres into the ferromagnet. Here we present a syst...
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We study spin dependent phonomena in superconducting junctions in both ballistic and diffusive regimes. For ballistic junctions we study both ferromagnet / sand d-wave superconductor junctions and two dimensional electron gas / s-wave superconductor junctions with Rashba spin-orbit coupling. It is shown that the exchange field alway suppresses the conductance while the Rashba spin-orbit couplin...
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We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (”reflectionless tunneling”). This Zero Bias An...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2006
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.74.220504