Nuclear spin quantum memory in silicon carbide
نویسندگان
چکیده
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications quantum technology. Some TM defects, e.g. vanadium, emit one of the telecom bands, but large ground state hyperfine manifold poses problem which require pure states. We develop driven, dissipative protocol to polarize nuclear spin, based on rigorous theoretical model defect. further show that nuclear-spin polarization enables use well-known methods initialization and long-time coherent storage The proposed preparation thus marks first step towards an all-optically controlled integrated technology with SiC.
منابع مشابه
Polarizing Nuclear Spins in Silicon Carbide
Quantum computers and other quantum information processing (QIP) devices—such as simulators, sensors, and communication channels—hold the promise to deliver performances not attainable by classical systems. Unfortunately, the qubits used to store information are usually fragile and difficult to manipulate and engineer, thus forestalling advances in the field. Many qubit candidates suffer from s...
متن کاملSilicon Carbide for Novel Quantum Technology Devices
Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quan...
متن کاملToward a Silicon - Based Nuclear - Spin Quantum Computer
quantum computing is to identify a system that can be scaled up to the number of qubits needed to execute nontrivial quantum algorithms. Peter Shor’s algorithm for finding the prime factors of numbers used in public-encryption systems (numbers that typically consist of more than a hundred digits) would likely require a quantum computer with several thousand qubits. Depending on the error correc...
متن کاملSpin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit
متن کامل
Polytype control of spin qubits in silicon carbide
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials-driven approach that could ultimately lead to 'designer' spins with tailored propertie...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical review research
سال: 2022
ISSN: ['2643-1564']
DOI: https://doi.org/10.1103/physrevresearch.4.033107