Nucleation sites of expanded stacking faults detected by <i>in operando</i> x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs

Optical Investigations of stacking faults in 4H-SiC epitaxial layers: comparison of 3C and 8H polytypes

We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H-SiC matrix. First the concept of low temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of valence band offset, internal polarization field and non homogeneity of t...

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the exciton...

Shockley-Frank stacking faults in 6H-SiC

Optical investigations techniques used for stacking faults characterization in SiC

Stacking Faults (SFs) are important crystal defects in 4H-SiC [1]. They can be electrically active and, in this case, behave as deep quantum well (QW) traps for electrons [2]. This leads to the degradation of high voltage bipolar diodes [3]. The basic origin of SFs in SiC is the small total energy difference between two different polytypes. The net consequence is that they can appear spontaneou...

Dynamical x-ray reflection at terraces in epitaxial layers

Terrace formation in semiconductor epitaxial layers has been postulated to cause lattice bending, which ought to be observable by x-ray diffraction. Consideration of dynamical effects of x-ray reflection, both at the terraces and from a distorted crystal lattice, shows that diffraction effects by far outweigh the effects oflattice bending. For a given liquid phase epitaxial GaAs layer on a GaAs...