Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

The effect of an insulation lid on the growth 4-inch β-Ga2O3 single crystals by Czochralski method is analyzed numerical simulation. mainly hinders upward radiant heat transfer from melt and crucible increases axial temperature gradient in crystal. Such benefits make melt/crystal interface convex, which conducive to suppressing spiral growing large with high quality. Materials low thermal conductivity λ emissivity ε are optimal choices for making lid. inner hole has a great influence isolation heat, it determined that maximum size diameter Din should not be larger than 130 mm. Thermal stress analysis results indicated will cause better distribution, illustrating quality cylindrical