On optimization of manufacturing of a step-down DC-DC converter to increase integration density of elements

<p>We consider possibility to increase field-effect transistor's density in a switched-capacitor step-down DC-DC converter. Based on this approach we analyzed manufacturing of the converter heterostructure with special structure. Some specific sections must be doped by ion implantation or diffusion. After procedure optimized annealing has been done. We also obtained conditions for decreasing mismatch-induced stress value heterostructure. An analytical analysis heat and mass transport multilayer structures introduced. The gives without crosslinking solutionson interfaces between layers, take into account (i) spatial variation parameters considered processes; (ii) temporal (iii) nonlinearity (iv) stress.</p>