Optimization and Characterization of Gate Electrode Dependent Flicker Noise in Silicon Nanowire Transistors
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چکیده
منابع مشابه
Optimization and Characterization Of Gate Electrode Dependent Flicker Noise in Silicon Nanowire Transistors
The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, Ion / Ioff and ...
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ژورنال
عنوان ژورنال: Journal of Electrical Engineering and Technology
سال: 2014
ISSN: 1975-0102
DOI: 10.5370/jeet.2014.9.4.1343