Optimization of Hybrid Silicon Lasers for High-Speed Direct Modulation

High speed modulation of hybrid silicon evanescent lasers

High-speed modulation results and analysis of hybrid silicon evanescent lasers is described. It should be possible to achieve a 3dB-bandwidth over 50 GHz and a data rate of 50 Gbit/s. 2009 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (130.3130) Integrated optics materials

High-Speed Direct-Modulation of InP Microdisk Lasers

We demonstrate for the first time high-speed direct-modulation of InP microdisk lasers by exploiting longitudinal mode competition. High-speed operation is demonstrated by means of S21 and PRBS modulation. We show open eye diagrams and bit-error rates up to 10 Gb/s.

Fine structures in the broadened line of distributed feedback lasers under high‐speed direct modulation

Low-voltage, high speed, compact silicon modulator for BPSK modulation.

A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, VπLπ equals to 0.45V·cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25 Gb/s non-return-to-zero(NRZ)-BPSK with 6Vpp RF driving signal was ach...

High speed hybrid silicon evanescent Mach-Zehnder modulator and switch.

We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation.