Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se ₂ Thin Films

High-efficiency Cu(In,Ga)Se2 (CIGS) thin-film solar cells are based on polycrystalline CIGS absorber layers, which contain grain boundaries, stacking faults, and dislocations. While planar defects in layers have been investigated extensively, little is still known about the impact of dislocations optoelectronic properties absorbers. Herein, evidence for an inactivity these thin films given, contrast to situation at boundaries. This unique behavior explained by extensive elemental redistribution detected around dislocation cores, connected with strain field, probably leading a shift defect states toward band edges.