Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures

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Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures

The studies of the bipolar resistive switching effect in thin film heterojunctions (YBa2Cu3O7-δ /Ag) and (Nd 2-x Ce x CuO4-y /Ag) have exhibited the role of oxygen as a doping element in hole- and electron-doped HTSC compounds.

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ژورنال

عنوان ژورنال: SpringerPlus

سال: 2013

ISSN: 2193-1801

DOI: 10.1186/2193-1801-2-384