Partial structure of amorphous metal.
نویسندگان
چکیده
منابع مشابه
Electrical behaviour of metal / tetrahedral amorphous carbon / metal structure
Silicon and GaAs based devices are limited in their high-temperature applications as these materials lack high sensitivity to the temperature range above 200°C due to their small band gaps. Therefore, exploration of new materials with a high-temperature performance is necessary. Diamond-like carbon as a semiconducting material may be one of the promising candidates due to its many properties cl...
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ZIF-4, a metal-organic framework (MOF) with a zeolitic structure, undergoes a crystal-amorphous transition on heating to 300 degrees C. The amorphous form, which we term a-ZIF, is recoverable to ambient conditions or may be converted to a dense crystalline phase of the same composition by heating to 400 degrees C. Neutron and x-ray total scattering data collected during the amorphization proces...
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As recently demonstrated, amorphous metal foams are highly ductile in compression, and thus offer attractive compromises in mechanical and physical properties between crystalline metallic and ceramic foams. Challenges associated with fabrication of amorphous metal foams are critically assessed in the context of current and future processing methods, and conclusions are drawn regarding the prope...
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We characterized the conduction mechanisms in thin sputtered films of three representative binary Me–O (Me = Ta, W, and Nb) systems as a function of oxygen content, by combining in situ chemical state and electronic band structure studies from X-ray photoemission with temperature-dependent transport measurements. Despite certain differences, these amorphous films all displayed Fermi glass behav...
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ژورنال
عنوان ژورنال: Bulletin of the Japan Institute of Metals
سال: 1987
ISSN: 0021-4426,1884-5835
DOI: 10.2320/materia1962.26.481