Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure

نویسندگان

چکیده

We present comprehensive investigation of the optical properties hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods spectroscopy by means Fourier-transformed photoluminescence photoreflectance are employed to probe transitions in this complex multilayer system. Based on comparison between absorption-like emission-like spectra (also function temperature) confronted with band structure calculations four main could be resolved identified. For one them, there has been observed unusually strong linear polarization dependence never reported structures that kind. It interpreted as related transition at GaSb/GaInAsSb interface, for which various scenarios causing selectivity discussed.

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ژورنال

عنوان ژورنال: Optica Applicata

سال: 2021

ISSN: ['0078-5466', '1899-7015']

DOI: https://doi.org/10.37190/oa210202