PECVD silicon carbide surface micromachining technology and selected MEMS applications

PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

A review of silicon carbide development in MEMS applications

Due to its desirable material properties, Silicon Carbide (SiC) has become an alternative material to replace Si for Microelectromechanical Systems (MEMS) applications in harsh environments. To promote SiC MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. The developments in these areas have c...

Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). T...

Silicon Micromachining Technology for Passive THz Components

Silicon micromachined terahertz passive components such as silicon washers, waveguide blocks for W-band (75-110 GHz) power amplifiers, and waveguides for 325-500 GHz band have been designed, microfabricated, and characterized. Based on these results, an integrated 600 GHz silicon micromachined RadiometerOn-a-Chip (ROC) has been demonstrated for the first time. It reduced in mass by an order of ...