Peridynamic simulations of damage in indentation and scratching of 3C-SiC

The cubic silicon carbide (3C-SiC) has broad application prospects due to its excellent properties. modeling of damage in 3C-SiC contact loads is important yet challenging. In this paper, simulations based on peridynamics theory are proposed model indentation and scratching. indentation, the pop-in phenomenon load-depth curve initiation propagation cracks observed. During scratching, specific cutting energy (energy consumed per unit volume material removed) increases nonlinearly with decrease scratching depth. Initiation radical both sides groove found. addition, for double indenters, removal more than twice that an indenter when interval less threshold. This paper demonstrates a powerful tool investigate brittle materials.