Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers

Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by c...

Photoluminescence and bowing parameters of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy

Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conductio...

Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors

Direct formation of InAs quantum dots grown on InP „001... by solid-source molecular beam epitaxy

We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP 001 by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs 4 2 ↔ 2 4 surface reconstruction changes. Based on the result...