Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
نویسندگان
چکیده
منابع مشابه
Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air ga...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...
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• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملThe Role of Magnetic Field in Atomic Layer Deposition of Al2O3 Thin Films Enhanced by Radio Frequency Plasma
As a media aluminum oxide (Al2O3) thin films deposited by radio frequency plasma-assisted atomic layer deposition (RF-PA-ALD) method were employed to explore the magnetic field effect. Different from normal plasma-assisted ALD (PA-ALD) technology a magnetic field was applied during the whole deposition process. With this novel ALD technology it obtains that the deposition rate in each cycle of ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2018
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4986202