Point-like topological defects in bilayer quantum Hall systems
نویسندگان
چکیده
منابع مشابه
Interlayer transport in bilayer quantum Hall systems.
Bilayer quantum Hall systems have a broken symmetry ground state at a filling factor which can be viewed either as an excitonic superfluid or as a pseudospin ferromagnet. We present a theory of interlayer transport in quantum Hall bilayers that highlights remarkable similarities and critical differences between transport in Josephson junction and ferromagnetic metal spin-transfer devices. Our t...
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The condensation of excitons, bound electron-hole pairs in a solid, into a coherent collective electronic state was predicted over 50 years ago. Perhaps surprisingly, the phenomenon was first observed in a system consisting of two closely-spaced parallel two-dimensional electron gases in a semiconductor double quantum well. At an appropriate high magnetic field and low temperature, the bilayer ...
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Tomas Löfwander,1 Pablo San-Jose,2 and Elsa Prada3 1Department of Microtechnology and Nanoscience MC2, Chalmers University of Technology, SE-412 96 Göteborg, Sweden 2Instituto de Estructura de la Materia (IEM-CSIC), Serrano 123, 28006 Madrid, Spain 3Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain (Received 3 December 2012; revised manuscript received 3 May 2...
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We derive the effective Hamiltonian for the composite fermion in double-layer quantum Hall systems with inter-layer tunneling at total Landau-level filling factor ν = 1/m, where m is an integer. We find that the ground state is the triplet p-wave BCS pairing state of the composite fermions. At ν = 1/2, the ground state of the system evolves from the Halperin (3, 3, 1)-state toward the Pfaffian-...
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We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to the Coulomb repulsion between electrons. We focus on fractional quantum Hall effect in asymmetric bilayer systems at filling factor ν = 4/11 and show that an ...
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ژورنال
عنوان ژورنال: Journal of Statistical Mechanics: Theory and Experiment
سال: 2006
ISSN: 1742-5468
DOI: 10.1088/1742-5468/2006/05/l05002