Polarization of stacking fault related luminescence in GaN nanorods

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

Observation of Stacking Fault Tetrahedral in TWIP Steel

Low stacking fault energy face centered cubic (FCC) materials contain characteristic defect structures. Stacking fault tetrahedral are one of those rare structures that occur under special experimental conditions. For the first time, stacking fault tetrahedral were observed in Fe-30Mn-3Al-3Si twinning induced plasticity (TWIP) steel. Their presence resulted from a quenching heat treatment.

GaN Nanorods and Nanotubes 35 Epitaxial Growth of ZnO-GaN Hetero-Nanorods and GaN Nanotubes

Various methods to grow high quality and perfectly arranged ZnO nanorods have been reported over the recent years (see, e.g., [1, 2] and references therein). However, due to the material properties of ZnO and its related compounds, there are many restrictions in designing more complex heterostructures or even devices based on such nanorods. In particular p-type doping of ZnO is still a big, yet...

Unusual luminescence lines in GaN