Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy

Enhanced group V intermixing in InGaAs/ InP quantum wells studied by cross- sectional scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy is used to study InGaAs/ InP quantum well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after anneali...

Probing the History of Scanning Tunneling Microscopy

We present a brief history of the development of scanning tunneling microscopy (STM). These microscopes, developed in 1981 by Gerd Binnig and Heinrich Rohrer (Nobel prize 1986), are capable of imaging and manipulating at an atomic level. STMs, and the group of instruments corporately referred to as scanning probe microscopes that evolved from them, are part of the instrumentation that has enabl...

Local probing and manipulation of molecules and nanoscale contacts with scanning tunneling microscopy

tionaltheorie in Kooperation mit Theoretikern unterstützt.

Probing light emission from quantum wells within a single nanorod.

Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simul...

Microscopy, Scanning Tunneling