Properties of Sputtered Zirconia Thin Films for SOFCs.
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چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
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15 صفحه اولStructure and magnetic properties of sputtered thin films of Fe0M79Ge0.21
Films of Fee.79Geez1 with thicknesses of 300 nm were synthesized by ion beam sputtering, and were annealed at temperatures from 200 to 550 “C. The materials were characterized by x-ray diffractometry, Mdssbauer spectrometry, vibrating sample magnetometry, ferromagnetic resonance spectrometry, and electrical resistivity measurements. The as-prepared materials comprised chemically disordered bee ...
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Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young’s modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8–23 and 100–210 GPa, respectively. Additionally, Fourier-transfor...
متن کاملProperties of Sputtered A-ge and A-ge:h Thin Films
Title of Thesis : Properties of sputtered a-Ge and a-Ge:H thin films Hanjin Cho, Master of Science in Electrical Engineering , 1987 Thesis directed by : Dr. Kenneth S. Sohn. The effect of the amorphous and glassy structure of amorphous germanium films on their electrical characteristics was investigated experimentally. The films were deposited onto silicon substrates using a modified MRC 8800 t...
متن کاملUltraviolet detectors in thin sputtered ZnO films.
Sputtering of ZnO is a well-known technique.'9 The application of sputtered thin films of ZnO has mainly been as surface acoustic wave transducers. To our knowledge nobody has yet used these films as detectors for UV radiation. Measurements of the intensity of UV radiation, for example in medical applications in connection with UV irradiation of the skin, are very inaccurate due to the lack of ...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1997
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.40.372