Prospect of GNR as Channel Material for Tunnel Field Effect Transistor

Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

Design and Simulation of a Dual Material Double Gate Tunnel Field Effect Transistor Using Tcad

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

Field effect transistor with integrated microfluidic channel as pH sensor

This paper presents an original design of chemical sensors with an integrated microfluidic channel. Targeted applications are pH-meters devices. The integration of the microfluidic channel allows decreasing the volume required for each measurement. The sensing part of the device consists of a field effect transistor with a suspended gate directly performed above the fluidic channel. Chemicals u...

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application