Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs

Abstract AlGaN/GaN high electron mobility transistors (HEMTs) with different device sizes were prepared and exposed to 0.4 MeV proton irradiation. The low-field carrier transport characteristics of the gate channel are obtained from capacitance-voltage curves current-voltage curves. For a longer gate-drain distance (30 μm), after irradiation, gate-channel increases by 14.3% on average. shorter (15 decreases 13.4% average This phenomenon is studied regard polarization scattering effect. It found that distribution in HEMTs changes irradiation distances correspond distributions.