Proximity-induced superconducting gap in the intrinsic magnetic topological insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>

نویسندگان

چکیده

We report magnetotransport measurements in the NbN-magnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ (MBT)-NbN junction at low temperature. At 10 mK, nonlinear current-voltage characteristic of shows a tunneling behavior, indicating existence interfacial potential barriers within heterostructure. Under an out-of-plane perpendicular magnetic field, transition from negative to positive magnetoresistance (MR) is found when increasing bias voltage. A proximity-induced superconducting gap ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{ind}}$ estimated be $\ensuremath{\sim}0.1\phantom{\rule{0.16em}{0ex}}\mathrm{meV}$ by pair differential resistance dips. Moreover, induced enhanced gradually tuning Fermi level toward charge neutral point back-gate voltage, which ascribed increased transport contribution surface states MBT. Intriguingly, exhibits anomalous magnetic-field-assisted enhancement, may originate spin-orbit coupling and order Our results reveal interplay between magnetism superconductivity MBT, paving way for further studies on chiral Majorana edge modes quantum Hall insulator--superconductor hybrid systems.

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2022

ISSN: ['1098-0121', '1550-235X', '1538-4489']

DOI: https://doi.org/10.1103/physrevb.105.184515