Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength
نویسندگان
چکیده
منابع مشابه
Wavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
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متن کاملwavelength and polarization variations of inas/gaas quantum dots emission at liquid helium temperature via microphotoluminescence spectroscopy
in this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled inas/gaas quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. the microcavity wafer sample is grown by molecular beam epitaxy (mbe) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2013
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4828357