Pseudomorphic-to-bulk fcc phase transition of thin Ni films on Pd(100)
نویسندگان
چکیده
منابع مشابه
Annealing temperature effect on nanostructure and phase transition of Copper Oxide thin films
This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...
متن کاملAnnealing temperature effect on nanostructure and phase transition of Copper Oxide thin films
This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...
متن کاملannealing temperature effect on nanostructure and phase transition of copper oxide thin films
this paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by pvd method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°c) with a flow of 1 cm3s-1 oxygen. the x-ray diffraction (xrd) was employed for crystallographic and phase analyses, while atomic force microscopy (afm) was us...
متن کاملHeating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films
This work reports the detailed manufacturing process of polycrystalline SiGe/Si thin film layers and their heating effect on phase transition of GeSbTe chalcogenide films. The SiGe and Si films were grown successively by chemical vapor deposition, and different methods were applied to dope the SiGe films depending on their semiconducting nature because of phosphorus autodoping. Although the min...
متن کاملOn the reorientation transition of ultra–thin Ni/Cu(001) films
The reorientation transition of themagnetization of ferromagnetic films is studied on amicroscopic basis within aHeisenberg spinmodel. Using a modified mean field formulation it is possible to calculate properties of magnetic thin films with non–integer thicknesses. This is especially important for the reorientation transition in Ni/Cu(001), as there the magnetic properties are a sensitive func...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2004
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.70.045412