Quantum-statistical Analysis of Low Energy Sputtering
نویسندگان
چکیده
منابع مشابه
Sputtering of ice by low-energy ions
We measured the total sputtering yield Y of amorphous water ice at 80 K for 0.35–4 keV He and Ar ions. We found that Y depends linearly on the elastic stopping cross section at low energies as predicted by the standard linear cascade theory of sputtering. As the energy increases, a quadratic dependence with the electronic stopping cross section arises due to cooperative effects between excitati...
متن کاملEnergy dependence of quantum dot formation by ion sputtering
Ordered quantum dot patterns are generated on GaSb and InSb surfaces due to a surface instability induced by Ar-ion sputtering at normal incidence. The characteristic length of the generated patterns scales with the square root of the ion energy over the energy range of 75–1800 eV. This energy dependence is compared to the solutions of the isotropic Kuramoto-Sivashinsky equation and allows the ...
متن کاملSurface Morphology Evolution of GaAs by Low Energy Ion Sputtering
Low energy Ar ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solut...
متن کاملProduction of ordered silicon nanocrystals by low-energy ion sputtering
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si ~100! substrate with 1.2 keV Ar ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradi...
متن کاملLow energy sputtering of nickel by normally incident xenon ions
New sputter deposition processes, such as biased target ion beam deposition, are beginning to be used to grow metallic superlattices. In these processes, sputtering of a target material at ion energies close to the threshold for the onset of sputtering can be used to create a low energy flux of metal atoms and reflected neutrals. Using embedded atom method potentials for fcc metals and a univer...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Australian Journal of Physics
سال: 1985
ISSN: 0004-9506
DOI: 10.1071/ph850125